BSM50GD120DN2G datasheet(2/9 Pages) SIEMENS

Part #	BSM50GD120DN2G

Description	IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 9 page

Semiconductor Group

Aug-23-1996

BSM 50 GD 120 DN2G

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Gate threshold voltage

VGE = VCE, IC = 2 mA

VGE(th)

4.5

5.5

6.5

Collector-emitter saturation voltage

VGE = 15 V, IC = 50 A, Tj = 25 °C

VGE = 15 V, IC = 50 A, Tj = 125 °C

VCE(sat)

3.1

2.5

3.7

Zero gate voltage collector current

VCE = 1200 V, VGE = 0 V, Tj = 25 °C

VCE = 1200 V, VGE = 0 V, Tj = 125 °C

ICES

0.8

Gate-emitter leakage current

VGE = 20 V, VCE = 0 V

IGES

200

AC Characteristics

Transconductance

VCE = 20 V, IC = 50 A

gfs

Input capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Ciss

3300

Output capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Coss

500

Reverse transfer capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Crss

220

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