CMLM7387

SURFACE MOUNT

N-CHANNEL MOSFET AND

LOW NOISE PNP TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLM7387

is a Multi Discrete Module™ consisting of a single

N-Channel Enhancement-mode MOSFET and a Low

Noise PNP transistor packaged in a space saving

PICOmini™ SOT-563 surface mount case. This

device is designed for small signal general purpose

applications where size and operational efficiency are

prime requirements.

MARKING CODE: 7C7

MAXIMUM RATINGS (SOT-563 Package): (TA=25°C)

SYMBOL

UNITS

Power Dissipation (Note 1)

PD

350

mW

Power Dissipation (Note 2)

PD

300

mW

Power Dissipation (Note 3)

PD

150

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

MAXIMUM RATINGS Q1: (TA=25°C)

SYMBOL

UNITS

Drain-Source Voltage

VDS

50

V

Gate-Source Voltage

VGS

12

V

Continuous Drain Current

ID

160

mA

Maximum Pulsed Drain Current

IDM

560

mA

MAXIMUM RATINGS Q2: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

45

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current

IC

100

mA

ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IGSSF, IGSSR

VGS=8.0V, VDS=0V

1.0

μA

IGSSF, IGSSR

VGS=12V, VDS=0V

5.0

μA

IDSS

VDS=50V, VGS=0V

10

μA

BVDSS

VGS=0V, ID=250μA

50

V

VGS(th)

VDS=VGS, ID=250μA

0.7

1.0

V

rDS(ON)

VGS=4.0V, ID=100mA

4.0

Ω

rDS(ON)

VGS=2.5V, ID=80mA

5.0

Ω

gFS

VDS=10V, ID=100mA

180

mS

FEATURES:

• ESD protection up to 2kV

• Low rDS(on) MOSFET

• Low VCE(SAT) PNP Transistor

APPLICATIONS:

• DC / DC Converters

• Battery Powered Portable Equipment

Notes:

• Devices are

Halogen Free by design

SOT-563 CASE

TM

R0 (1-December 2009)

www.centr a lsemi.com