SFP50N06 datasheet(2/7 Pages) WINSEMI

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SFP50N06

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Type

Max

Unit

Gate leakage current

IGSS

VGS = ±20 V, VDS = 0 V

±100

Gate−source breakdown voltage

V(BR)GSS

IG = ±10 μA, VDS = 0 V

±20

Drain cut−off current

IDSS

VDS = 60 V, VGS = 0 V

μA

VDS = 60 V, Tc = 125°C

250

μA

Drain−source breakdown voltage

V(BR)DSS

ID = 250 μA, VGS = 0 V

Gate threshold voltage

VGS(th)

VDS = 10 V, ID =250 μA

Drain−source ON resistance

RDS(ON)

VGS = 10 V, ID = 25A

mΩ

Forward Transconductance

gfs

VDS=25V, ID = 25A

Input capacitance

Ciss

VDS = 25 V,

VGS = 0 V,

f = 1 MHz

1180

1540

Reverse transfer capacitance

Crss

Output capacitance

Coss

440

580

Switching time

Rise time

DD=30V

=25A

G =25 Ω

= 10V

(Note4,5)

Turn−on time

ton

105

220

Fall time

130

Turn−off time

toff

140

Total gate charge (gate−source plus

gate−drain)

VDD =48 V,

VGS = 10 V,

ID =50 A

(Note4,5)

Gate−source charge

Qgs

Gate−drain (“miller”) Charge

Qgd

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Type

Max

Unit

Continuous drain reverse current

IDR

Pulse drain reverse current

IDRP

200

Forward voltage (diode)

VDSF

IDR =35A, VGS = 0 V

1.5

Reverse recovery time

trr

IDR =35A, VGS = 0 V,

dIDR / dt = 100 A / μs

Reverse recovery charge

Qrr

μC

Note 1.Repeativity rating :pulse width limited by junction temperature

2.L=0.5mH,IAS=25A,VDD=25V,VGS=10V,Starting TJ=25℃

3.ISD≤25A,di/dt≤380A/us, VDD<BVDSS,STARTING TJ=25℃

4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%

5.Essentially independent of operating temperature.

SFP50N06 Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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