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BUZ310 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BUZ310 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 9 page  Semiconductor Group 1 07/96 BUZ 310 SIPMOS ® Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 310 1000 V 2.5 A 5 Ω TO-218 AA C67078-A3101-A2 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 1000 V Drain-gate voltage RGS = 20 kΩ V DGR 1000 Continuous drain current TC = 25 °C ID 2.5 A Pulsed drain current TC = 25 °C IDpuls 10 Gate source voltage VGS ± 20 V Power dissipation TC = 25 °C Ptot 78 W Operating temperature Tj -55 ... ...+ 150 °C Storage temperature Tstg -55 ... ...+ 150 Thermal resistance, chip case RthJC ≤ 1.6 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 C IEC climatic category, DIN IEC 68-1 55 / 150 / 56 |
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