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WFSA6503 Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Part # WFSA6503
Description  N- Channel and P-Channel Silicon MOSFETs
PDF  9 Pages
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Manufacturer  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Direct Link  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

WFSA6503 Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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N-Channel Electrical Characteristics at Ta=250C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=250uA, VGS=0V
30
-
-
V
Zero-Gate Voltage Drain Current
IDSS
VDS=24V, VGS=0V
-
-
1
uA
Gate-to-Source Leakage Current
IGSS
VGS=+20V, VDS=0V
-
-
+100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250uA
1.0
1.6
2.0
V
Static Drain-to-Source On-State Resistance
RDS(ON)
ID=6.9A, VGS=10V
-
17
25
mΩ
RDS(ON)
ID=5A, VGS=4.5V
-
24
40
mΩ
Input Capacitance
Ciss
VDS=15V,
VGS=0V,
f=1MHz
-
680
820
pF
Output Capacitance
Coss
-
102
-
Reverse Transfer Capacitance
Crss
-77
-
Turn-on Delay Time
td(on)
VGS=10V,
VDS=15V,
RL=2.2Ω,
RGEN=3Ω
-4.6
7
nS
Rise Time
tr
-4.1
6
Turn-off Delay Time
td(off)
-
20.6
30
Fall Time
tf
-5.2
8
Total Gate Charge
Qg
VDS=15V,
VGS=10V,
ID=6.9A
-
6.74
8.1
nC
Gate-to-Source Charge
Qgs
-1.82
-
Gate-to-Drain “Miller” Charge
Qgd
-3.2
-
Diode Forward Voltage
VSD
IS=1A, VGS=0V
-
0.76
1.3
V



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