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WCD4C60S Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WCD4C60S Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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2 / 5 page ![]() Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions Value Units Min Typ Max IDRM Repetitive Peak Off-State Current VAK=VDRM RGK=1KΩ - - 5 μA - - 1 mA VTM Peak On-State Voltage (1) ITM=8A, tp=380㎲ - - 1.8 V IGT Gate Trigger Current (2) VD=12V,RL=140 20 - 80 μA VGT Gate Trigger Voltage (2) - - 0.8 V VGD Non-Trigger Gate Voltage (1) VD=12V,RL=3.3KΩ, RGK=1 KΩ 0.1 V dv/dt Critical Rate of Rise Off-State Voltage VD=67%VDRM, RGK=1 KΩ 15 - - V/㎲ IH Holding Current IT=50mA, RGK=1 KΩ - - 5 mA IL Latching Current IT=1mA, RGK=1 KΩ 6 - - mA Rd Dynamic resistance Tj=125°C - - 100 mΩ N N N Not ot ot ote: e: e: e: 1. Pulse Width = 1.0 ms , Duty cycle ≤ 1% 2. RGK Current not Included in measurement W W W WC C C CD D D D4 4 4 4C C C C6 6 6 60S 0S 0S 0S |
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