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RJH1CF5RDPQ-80 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # RJH1CF5RDPQ-80
Description  Silicon N Channel IGBT High Speed Power Switching
PDF  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJH1CF5RDPQ-80 Datasheet(HTML) 2 Page - Renesas Technology Corp

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RJH1CF5RDPQ-80
Preliminary
R07DS0355EJ0100 Rev.1.00
Page 2 of 6
May 12, 2011
Electrical Characteristics
(Tj = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero gate voltage collector current
ICES
⎯
⎯
100
μA
VCE = 1200 V, VGE = 0
Gate to emitter leak current
IGES
⎯
⎯
±0.1
μA
VGE = ±30 V, VCE = 0
Gate to emitter cutoff voltage
VGE(off)
3.5
5.0
7.0
V
VCE = 10V, IC = 1 mA
⎯
1.95
2.4
V
IC = 25 A, VGE = 15V
Note2
Collector to emitter saturation voltage
VCE(sat)
⎯
2.4
⎯
V
IC = 50 A, VGE = 15V
Note2
Input capacitance
Cies
⎯
1765
⎯
pF
Output capacitance
Coes
⎯
36
⎯
pF
Reverse transfer capacitance
Cres
⎯
28
⎯
pF
VCE = 25 V
VGE = 0 V
f = 1 MHz
td(on)
⎯
45
⎯
ns
tr
⎯
57
⎯
ns
td(off)
⎯
110
⎯
ns
Switching time
tf
⎯
272
⎯
ns
IC = 25 A
VCE = 600 V, VGE = 15 V
Rg = 5
Ω Note2
Resistive Load
C-E diode forward voltage
VF
⎯
4.2
5.4
V
IF = 10 A
Note2
Notes: 2. Pulse test



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