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WTPB16A60SW Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Part # WTPB16A60SW
Description  Sensitive Gate Bi-Directional Triode Thyristor
PDF  6 Pages
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Manufacturer  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Direct Link  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

WTPB16A60SW Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

  WTPB16A60SW Datasheet HTML 1Page - Shenzhen Winsemi Microelectronics Co., Ltd WTPB16A60SW Datasheet HTML 2Page - Shenzhen Winsemi Microelectronics Co., Ltd WTPB16A60SW Datasheet HTML 3Page - Shenzhen Winsemi Microelectronics Co., Ltd WTPB16A60SW Datasheet HTML 4Page - Shenzhen Winsemi Microelectronics Co., Ltd WTPB16A60SW Datasheet HTML 5Page - Shenzhen Winsemi Microelectronics Co., Ltd WTPB16A60SW Datasheet HTML 6Page - Shenzhen Winsemi Microelectronics Co., Ltd  
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WTPB16A60SW
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Symbol
Characteristics
Min
Typ.
Max
Unit
IDRM//IRRM
Peak Forward or Reverse Blocking Current
(V
=V
)
T
J=25℃
-
-
5
μA
TJ=125℃
-
-
1
mA
VTM
Forward “On” Voltage
(Note2)
(ITM = 22.5A tp=380μs)
-
-
1.55
V
IGT
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 33 Ω)
T2+G+
T2+G-
T2-G-
-
-
-
-
-
-
10
10
10
mA
VGT
Gate Trigger Voltage (Continuous dc)
(VD =12 Vdc, RL = 33 Ω)
T2+G+
T2+G-
T2-G-
-
-
-
-
-
-
1.2
1.2
1.2
V
VGD
Gate threshold voltage( VD= VDRM,RL = 3.3 KΩ,TJ=125℃,)
0.2
-
-
V
dV/dt
Critical rate of rise of commutation Voltage (VD=0.67VDRM)
40
-
-
V/μs
IH
Holding Current (IT= 100 mA)
-
-
15
mA
IL
Latching current
(VD =12 Vdc,IGT=0.1A)
T2+G+
T2+G-
T2-G-
-
-
-
-
-
-
25
30
25
mA
Rd
Dynamic resistance
-
-
25
mΩ
Steady,
Steady,
Steady,
Steady, keep
keep
keep
keep you
you
you
you advance
advance
advance
advance
E
E
E
Ellllec
ec
ec
ectri
tri
tri
trical
cal
cal
cal Ch
Ch
Ch
Cha
a
a
arrrrac
ac
ac
actttte
e
e
eri
ri
ri
ris
s
s
sti
ti
ti
tics
cs
cs
cs (T
J = 25°C unless otherwise specified)
DRM
RRM,
Note 2. Forward current applied for 1 ms maximum duration, duty cycle



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