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RJM0603JSC Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # RJM0603JSC
Description  Silicon N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching
PDF  12 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJM0603JSC Datasheet(HTML) 2 Page - Renesas Technology Corp

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RJM0603JSC
Preliminary
R07DS0339EJ0501 Rev.5.01
Page 2 of 11
Jul 22, 2011
Pin Arrangement
(Top View)
20
19
18
17
16
15
14
13
12
11
20
19
18
17
16
15
14
13
12
11
21
Common Header
22
Common Header
23
Common Header
1
2
3
4
5
6
7
8
9
10
1
2
3, 18
4
5, 6, 15, 16
7
8, 13
9
10
11
12
14
17
19
20
21
22
23
MOS1
MOS1
MOS1, 6
MOS2
MOS2, 5
MOS2
MOS3, 4
MOS3
MOS3
MOS4
MOS4
MOS5
MOS5
MOS6
MOS6
MOS1, 6
MOS2, 5
MOS3, 4
Source
Gate
Drain
Source
Drain
Gate
Drain
Source
Gate
Source
Gate
Source
Gate
Source
Gate
Drain (Header)
Drain (Header)
Drain (Header)
No.
1
2
3
4
5
6
7
8
9
10
(Bottom View)
14
S
19
S
11
S
MOS5
Pch
MOS6
Pch
MOS4
Pch
MOS2
Nch
MOS1
Nch
MOS3
Nch
12
G
17
G
10
G
7
G
S
4
S
9
S
1
20
G
2
G
D 8,13,23
D 5,6,15,16,22
D 3,18,21
Absolute Maximum Ratings
(Ta = 25
C)
Value
Item
Symbol
MOS1, 2, 3 (Nch)
MOS4, 5, 6 (Pch)
Unit
Drain to source voltage
VDSS
60
–60
V
Gate to source voltage
VGSS
+20 / –5
–20 / +5
V
Drain current
ID
20
–20
A
Drain peak current
ID (pulse)
Note1
80
–80
A
Channel dissipation
Pch
Note2
54
54
W
Avalanche current
IAP
Note3
20
20
A
Avalanche energy
EAR
Note3
34
34
mJ
Channel temperature
Tch
Note4
175
175
C
Storage temperature
Tstg
–55 to +150
–55 to +150
C
Notes: 1. PW
 10s duty cycle  1%
2. 1 Drive Operation ; Value at Tc = 25
C
3. Value at Tch = 25
C, Rg  50 
4. AEC-Q101 compliant
Thermal Impedance Characteristics
 Channel to case thermal impedance ch-c: 2.78C/W



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