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NESG220034 Datasheet(PDF) 9 Page - Renesas Technology Corp |
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NESG220034 Datasheet(HTML) 9 Page - Renesas Technology Corp |
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9 / 11 page ![]() Each Input Power Pin (each) (dBm) VCE = 5 V, IC (set) = 40 mA, f1 = 1.000 GHz, f2 = 1.001 GHz –50 –80 0 10 20 –10 –20 30 EACH OUTPUT POWER ,IM3 vs. EACH INPUT POWER Pout (each) IM3 –70 –60 –20 –40 –40 –10 20 0 10 40 30 Input Power Pin (dBm) COLLECTOR CURRENT vs. INPUT POWER 40 30 20 0 10 –10 400 500 200 100 300 0 –20 0 10 –10 20 VCE = 5 V, IC (set) = 40 mA, f = 1 GHz GL Pout IC OUTPUT POWER, LINEAR GAIN, 30 Collector Current IC (mA) OUTPUT 3RD ORDER INTERCEPT POINT vs. COLLECTOR CURRENT 40 30 20 10 0 1 10 100 VCE = 5 V, f1 = 1.000 GHz, f2 = 1.001 GHz Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 4 3 2 1 0 16 14 12 10 8 6 2 4 1 10 100 VCE = 5 V, f = 1 GHz, ZS = ZSopt, ZL = 50 Ω Ga NF 0 Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.necel.com/microwave/en/ Data Sheet PU10767EJ02V0DS 7 NESG220034 |
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