AM3445P

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM3445_B

-5.6

-4.8

-4.0

PRODUCT SUMMARY

-20

1

These miniature surface mount MOSFETs

utilize a high cell density trench process to

provide low r

power loss and heat dissipation. Typical

applications are DC-DC converters and

power management in portable and

battery-powered products such as

computers, printers, PCMCIA cards,

cellular and cordless telephones.

P-Channel 20-V (D-S) MOSFET

•

extends battery life

•

Low thermal impedance copper leadframe

TSOP-6 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

1

2

3

4

5

6

Symbol Maximum Units

-20

±8

o

C

-5.6

o

C

-4.5

±20

-1.7

A

o

C

2.0

o

C

1.3

-55 to 150

o

C

Power Dissipation

a

Operating Junction and Storage Temperature Range

W

Continuous Source Current (Diode Conduction)

a

Parame te r

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

A

Symbol

Maximum Units

Maximum Junction-to-Ambient

a

t <= 5 sec

62.5

o

C/W

THERMAL RESISTANCE RATINGS

Parameter