AM4490N

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM4490_E

1

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

N-Channel 100-V (D-S) MOSFET

•

extends battery life

•

Low thermal impedance copper leadframe

SOIC-8 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

5.2

4.8

PRODUCT SUMMARY

100

Symbol

Limit

Units

100

±20

o

C

±5.2

o

C

±3.9

±50

2.3

A

o

C

3.1

o

C

2.2

-55 to 150

o

C

Power Dissipation

a

Operating Junction and Storage Temperature Range

W

Continuous Source Current (Diode Conduction)

a

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

A

Symbol

Maximum

Units

Maximum Junction-to-Case

a

t <= 5 sec

25

o

C/W

Maximum Junction-to-Ambient

a

t <= 5 sec

50

o

C/W

THERMAL RESISTANCE RATINGS

Parameter

1

2

3

4

5

6

7

8