AM7380N

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM7380_A

1

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

N-Channel 80-V (D-S) MOSFET

•

extends battery life

•

Low thermal impedance copper leadframe

DFN3x3-8PP saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

9

8

PRODUCT SUMMARY

80

Symbol

Limit

Units

80

±20

o

C

±9

o

C

±7

±75

16

A

o

C

3.5

o

C

2

-55 to 150

o

C

Operating Junction and Storage Temperature Range

W

Continuous Source Current (Diode Conduction)

a

Parame te r

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

A

Power Dissipation

a

Symbol

Maximum

Units

Maximum Junction-to-Case

a

t <= 5 sec

25

o

C/W

Maximum Junction-to-Ambient

a

t <= 5 sec

50

o

C/W

THERMAL RESISTANCE RATINGS

Parameter

S

S

S

G

1

2

3

4

DFN3x3-8PP

Top View

D

D

D

D

8

7

6

5

D

S

G

N-Channel MOSFET