2SB1116L-X-T92-R datasheet(2/4 Pages) UTC

2 / 4 page

2SB1116/A

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R201-066.C

ABSOLUTE MAXIMUM RATINGS (Ta=25℃,unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

2SB1116

-60

Collector to Base Voltage

2SB1116A

VCBO

-80

2SB1116

-50

Collector to Emitter Voltage

2SB1116A

VCEO

-60

Emitter to Base Voltage

VEBO

-6

-1

Collector Current

Pulse(Note2)

ICM

-2

Total Power Dissipation

750

Junction Temperature

+150

°C

Operating Temperature

TOPR

-20 ~ +85

℃

Storage Temperature

TSTG

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width≦10ms, Duty cycle≦50%

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Emitter Saturation Voltage(Note) VCE(SAT) IC=-1A, IB=-50mA

-0.2

Base-Emitter Saturation Voltage(Note)

VBE(SAT)

IC=-1A, IB=-50mA

-0.9

-1.2

Base Emitter On Voltage(Note)

VBE(ON)

VCE=-2V, IC=-50mA

-600

-650

-700

Collector Cut-Off Current

ICBO

VCB=-60V, IE=0

-100

Emitter Cut-Off Current

IEBO

VEB=-6V, IC=0

-100

2SB1116

135

600

hFE1

VCE=-2V,

IC=-100mA

2SB1116A

135

400

DC Current Gain(Note)

hFE2

VCE=-2V, IC=-1A

Transition Frequency

VCE=-2V, IC=-100mA

120

MHz

Output Capacitance

COB

VCB=-10V, IE=0, f=1MHz

Turn On Time

tON

VCC=-10V, IC=-100mA

IB1=-IB2=-10mA, VBE(OFF)=2 ~ 3V

0.07

μs

Storage Time

tSTG

0.7

μs

Fall Time

0.07

μs

Note: Pulse Test: Pulse width≦350μs, Duty cycle 2%

≦

CLASSIFICATION OF hFE1

RANK

hFE1

135 ~ 270

200 ~ 400

300 ～ 600

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