MCR100-6-X-AE3-R datasheet(3/6 Pages) UTC

3 / 6 page

UNISONIC TECHNOLOGIES CO., LTD

MCR100

SCR

www.unisonic.com.tw

3 of 6

QW-R301-016.C

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

MCR100-4

200

MCR100-6

400

Peak Repetitive Off-State Voltage(Note 1)

(TJ=-40 ~ 110°С, Sine Wave, 50 ~ 60Hz;

Gate Open)

MCR100-8

VDRM,VRRM

600

On-Sate RMS Current (Tc=80°С) 180°С Condition Angles

IT(RMS)

0.8

Peak Non-Repetitive Surge Current

(1/2 cycle, Sine Wave, 60Hz, TJ=25°С)

ITSM

Circuit Fusing Considerations (t=8.3 ms)

0.415

Forward Peak Gate Power (TA=25°С, Pulse Width ≤1.0µs)

PGM

0.1

Forward Average Gate Power (TA=25°С, t=8.3ms)

PG(AV)

0.1

Peak Gate Current – Forward (TA=25°С, Pulse Width≤1.0μs)

IGM

Peak Gate Voltage – Reverse (TA=25°С, Pulse Width≤1.0μs)

VGRM

Operating Junction Temperature Range

(Rated VRRM and VDRM)

-40 ~ +110

°С

Storage Temperature Range

TSTG

-40 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MAX

UNIT

TO-92

200

°С/W

Junction to Ambient

SOT-23/SOT-89

θJA

400

°С/W

ELECTRICAL CHARACTERISTICS (TJ=25°С, unless otherwise stated)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

TC=25°С

μA

Peak Forward or Reverse Blocking

Current

TC=125°С

IDRM, IRRM

VD=Rated VDRM and VRRM;

RGK=1kΩ

100

μA

ON CHARACTERISTICS

Peak Forward On-State Voltage (Note 2)

VTM

ITM=1A Peak @ TA=25°С

1.7

Gate Trigger Current (Continuous DC)(Note3)

IGT

VAK=7Vdc, RL=100Ω, TC=25°С

200

μA

TC=25°С

0.5

Holding Current (Note 4)

TC=-40°С

VAK=7Vdc, initiating

current=20mA

TC=25°С

0.6

Latch Current

TC=-40°С

VAK=7V, Ig=200μA

TC=25°С

0.62

0.8

Gate Trigger Voltage (continuous

dc) (Note 3)

TC=-40°С

VGT

VAK=7Vdc, RL=100Ω

1.2

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off-State Voltage

dV/dt

VD=Rated VDRM, Exponential

Waveform, RGK=1000Ω,

TJ=110°С

μs

Critical Rate of Rise of On-State Current

di/dt

IPK=20A; Pw=10μsec;

diG/dt=1A/

μsec, Igt=20mA

μs

Notes: 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate

voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the

anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of

the devices are exceeded.

2. Indicates Pulse Test Width

≤1.0ms, duty cycle ≤1%

3. RGK=1000Ω included in measurement.

4. Does not include RGK in measurement

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