MMBT3904L-AL3-R datasheet(2/3 Pages) UTC

2 / 3 page

MMBT3904

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-012.F

ABSOLUTE MAXIMUM RATING ( TA=25°С, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current

200

Collector Dissipation

350

Junction Temperature

+150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

VCBO

IC=10μA, IE=0

Collector-Emitter Breakdown Voltage

VCEO

IC=1mA, IB=0 (Note)

Emitter-Base Breakdown Voltage

VEBO

IE=10μA, IC=0

Collector-Emitter Saturation Voltage (Note)

VCE(SAT)1IC=10mA, IB=1mA

0.2

VCE(SAT)2IC=50mA, IB=5mA

0.3

Base-Emitter Saturation Voltage (Note)

VBE(SAT)1IC=10mA, IB=1mA

0.65

0.85

VBE(SAT)2IC=50mA, IB=5mA

0.95

Collector Cut-Off Current

ICEX

VCE=30V, VEB=3V

Base Cut-Off Current

IBL

VCE=30V, VEB=3V

DC Current Gain (Note)

hFE1

VCE=1V, IC=0.1mA

hFE2

VCE=1V, IC=1mA

hFE3

VCE=1V, IC=10mA

100

300

hFE4

VCE=1V, IC=50mA

hFE5

VCE=1V, IC=100mA

Current Gain Bandwidth Product

VCE=20V, IC=10mA, f=100MHz

300

MHz

Output Capacitance

COB

VCB=5V, IE=0, f=1MHz

Turn On Time

tON

VCC=3V,VBE=0.5V,IC=10mA,IB1=1mA

Turn Off Time

tOFF

IB1=1B2=1mA

250

Note: Pulse test: PW<=300

μs, Duty Cycle<=2%

MMBT3904L-AL3-R Datasheet(PDF) 2 Page - Unisonic Technologies

MMBT3904L-AL3-R Datasheet(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3

Datasheet Download

Link URL