12P10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-262.B

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-100

V

Gate-Source Voltage

±30

V

Continuous Drain Current

-9.4

A

Pulsed Drain Current (Note 2)

-37.6

A

Avalanche Current (Note 2)

-9.4

A

Single Pulsed Avalanche Energy (Note 3)

370

mJ

Repetitive Avalanche Energy (Note 2)

5.0

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

-6.0

V/ns

Power Dissipation

TO-251/ TO-252

50

W

TO-263

65

Junction Temperature

+150

℃

Storage Temperature

-55 ~ +150

℃

Note:1.

2.

3.

4.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-251/ TO-252

110

℃

/W

TO-263

62.5

Junction to Case

TO-251/ TO-252

2.5

℃

/W

TO-263

2.31