25N06L-TN3-R datasheet(2/6 Pages) UTC

2 / 6 page

25N06

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-450.b

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage (VGS=0)

VDS

Drain-Gate Voltage (RGS=20kΩ)

VDGR

Gate-Source Voltage

VGS

± 20

Drain Current (Continuous)

TC=25°C

TC=100°C

Drain Current (Pulsed) (Note 2)

IDM

100

Single Pulse Avalanche Energy

(starting TJ =25°C, ID =25A, VDD =25 V)

EAS

100

Power Dissipation at TC=25°C

TO-220

TO-252

Junction Temperature

150

°C

Storage Temperature

TSTG

-65 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by safe operating area

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220

θJA

62.5

°C/W

TO-252

100

Junction to Case

TO-220

θJC

1.57

°C/W

TO-252

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