81CXXX/81NXXX

CMOS IC

UNISONICTECHNOLOGIESCO.,LTD

7 of 16

www.unisonic.com.tw

QW-R502-039,P

ELECTRICAL CHARACTERISTICS(Cont.)

Detection voltage (4.0V ~ 4.9V)

PARAMETER

SYMBOL

CIRCUIT

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Detect Voltage

1

×0.98

×1.02

V

Hysteresis Range

1

×0.02

×0.05

×0.08

V

Operating Voltage

1

0.7

10.0

V

Supply Current

2

1.5

3.8

μA

2.0

4.2

μA

Output Current

N-Channel

3

11.5

mA

P- Channel

4

(CMOS output)

-15.4

mA

Temperature Characteristics

DF

×

OPR

DF

V

ΔT

ΔV

±100

ppm/°C

Transient Delay Time

5

0.6V ~ 10V

50

200

ms

Detection voltage (5.0V)

PARAMETER

SYMBOL

CIRCUIT

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Detect Voltage

1

×0.98

×1.02

V

Hysteresis Range

1

×0.02

×0.05

×0.08

V

Operating Voltage

1

0.7

10.0

V

Supply Current

2

2.0

4.2

μA

Output Current

N-Channel

3

13.0

mA

P- Channel

4

(CMOS output)

-15.4

mA

Temperature Characteristics

DF

×

OPR

DF

V

ΔT

ΔV

±100

ppm/°C

Transient Delay Time

5

0.6V ~ 10V

50

200

ms

* Transient Delay Time: 1ms ~ 50ms & 200ms ~ 400ms versions are also available.

Note: The power consumption during power-start to output being stable (release operation) is 2μA greater than it is

after that period (completion of release operation) because of delay circuit through current.