UN1066-TN3-R datasheet(2/5 Pages) UTC

2 / 5 page

UN1066

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R209-023,C

ABSOLUTE MAXIMUM RATING (Ta=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-to-Base Voltage

BVCBO

Collector-to-Emitter Voltage

BVCEO

Emitter-to-Base Voltage

BVEBO

Collector Current

Collector Current (Pulse)

ICP

Base Current

600

Collector Dissipation(TC=25 )

℃

3.5

Junction Temperature

150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-to-Base Breakdown Voltage

BVCBO IC=10μ A, IE=0

Collector-to-Emitter Breakdown Voltage

BVCEO IC=1mA, RBE=∞

Emitter-to-Base Breakdown Voltage

BVEBO IE=10μA, IC=0

IC=1.5A, IB=30mA

180

Collector-to-Emitter Saturation Voltage

VCE(SAT)

IC=3A, IB=60mA

300

Base-to-Emitter Saturation Voltage

VBE(SAT) IC=1.5A, IB=30mA

1.2

Collector Cutoff Current

ICBO

VCB=12V, IE=0

0.1

µA

Emitter Cutoff Current

IEBO

VEB=4V, IC=0

0.1

µA

DC Current Gain

hFE

VCE=0.5V, IC=5A

250

Gain-Bandwidth Product

VCE=2V, IC=500mA

100

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

Turn-on Time

tON

Refer to Test Circuit

Storage Time

tSTG

Refer to Test Circuit

250

Fall Time

Refer to Test Circuit

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