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US112S Datasheet(PDF) 2 Page - Unisonic Technologies

Part # US112S
Description  SCRS
PDF  3 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

US112S Datasheet(HTML) 2 Page - Unisonic Technologies

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US112S/N
SCR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R301-013.Ca
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATING
UNIT
Repetitive Peak Off-State Voltages
US112S/N-4
VDRM
VRRM
400
V
US112S/N-6
600
US112S/N-8
800
RMS On-State Current (180°Conduction Angle) (TC = 110℃)
IT(RMS)
12
A
Average On-State Current (180°Conduction Angle) (TC = 110℃)
IT(AV)
8
A
Non Repetitive Surge Peak On-State Current
(TJ = 25℃)
tP=8.3ms
ITSM
146
A
tP=10ms
140
I²t Value For Fusing (tP = 10 ms ,TJ = 25℃)
I²t
98
A²S
Critical Rate Of Rise Of On-State Current
(IG = 2 x IGT , tR ≤ 100 ns, TJ = 125℃)
dI/dt
50
A/µs
Peak Gate Current (tP=20μs, F = 60 Hz, TJ =125℃)
IGM
4
A
Peak Reverse Gate Voltage
US112N
VRGM
5
V
Average Gate Power Dissipation (TJ= 125℃)
PG(AV)
1
W
Storage Temperature
TSTG
-40 ~ +150
℃
Junction Temperature
TJ
+125
℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
60
K/W
Junction to Case
θJC
1.3
K/W
ELECTRICAL CHARACTERISTICS (TJ=25℃unless otherwise specified)
US112S(SENSITIVE)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Gate Trigger Current
IGT
VD = 12V, RL =140Ω
200
µA
Gate Trigger Voltage
VGT
VD = 12V, RL=140Ω
0.8
V
Gate Non-Trigger Voltage
VGD
VD = VDRM, RL = 3.3kΩ,
RGK = 1KΩ, TJ = 125℃
0.1
V
Reverse Gate Voltage
VRG
IRG = 10 µA
8
V
Holding Current
IH
IT = 50mA, RGK = 1kΩ
5
mA
Latching Current
IL
IG = 1mA , RGK = 1kΩ
6
mA
Circuit Rate of Change of Off-State Voltage
dV/dt
VD = 67% VDRM, RGK = 220Ω
5
V/µs
On-State Voltage
VTM
ITM =24A, tP = 380 µs
1.6
V
Threshold Voltage
VT0
TJ = 125℃
0.85
V
Dynamic Resistance
RD
TJ = 125℃
30
mΩ
Off-State Leakage Current
IDRM
IRRM
VDRM = VRRM, RGK=220Ω
5
µA
VDRM = VRRM, RGK=220Ω, TJ= 125℃
2
mA



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