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TSL2580 Datasheet(PDF) 4 Page - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS |
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TSL2580 Datasheet(HTML) 4 Page - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS |
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4 / 34 page  TSL2580, TSL2581 LIGHT-TO-DIGITAL CONVERTER TAOS098 − MARCH 2010 4 r r Copyright E 2010, TAOS Inc. The LUMENOLOGY r Company www.taosinc.com Electrical Characteristics over recommended operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT I Supply current Active 175 250 μA IDD Supply current Power down 3 10 μA V INT SDA output low voltage 3 mA sink current 0 0.4 V VOL INT, SDA output low voltage 6 mA sink current 0 0.6 V I LEAK Leakage current −5 5 μA Operating Characteristics, VDD = 3 V, TA = 255C, (unless otherwise noted) (Notes 1, 2, 3, and 4) PARAMETER TEST CONDITIONS CHANNEL MIN TYP MAX UNIT fosc Oscillator frequency 705 750 795 kHz Dark ADC count value Ee = 0, ITIME = 0xB6 (200 ms), Ch0 0 1 5 counts Dark ADC count value Ee = 0, ITIME = 0xB6 (200 ms), gain = 16 × Ch1 0 1 5 counts ITIME 0xDB (100 ms) Ch0 37887 Full scale ADC count value ITIME = 0xDB (100 ms) Ch1 37887 counts Full scale ADC count value ITIME 0x6C (400 ms) Ch0 65535 counts ITIME = 0x6C (400 ms) Ch1 65535 λp = 625 nm, ITIME = 0xF6 (27 ms) Ch0 4000 5000 6000 ADC count value λp = 625 nm, ITIME = 0xF6 (27 ms) Ee = 171.6 μW/cm2, gain = 16 × Ch1 700 counts ADC count value λp = 850 nm, ITIME = 0xF6 (27 ms) Ch0 4000 5000 6000 counts λp = 850 nm, ITIME = 0xF6 (27 ms) Ee = 220 μW/cm2, gain = 16 × Ch1 2750 λ 625 nm 10 8 15 8 20 8 ADC count value ratio: Ch1/Ch0 λp = 625 nm 10.8 15.8 20.8 % ADC count value ratio: Ch1/Ch0 λ 850 nm 41 55 68 % ADC count value ratio: Ch1/Ch0 λp = 850 nm 41 55 68 % λ 625 nm ITIME 0xF6 (27 ms) Ch0 29.1 R Irradiance responsivity λp = 625 nm, ITIME = 0xF6 (27 ms) Ch1 4 counts/ ( μW/ Re Irradiance responsivity λ 850 nm ITIME 0xF6 (27 ms) Ch0 22.8 ( μW/ cm2) λp = 850 nm, ITIME = 0xF6 (27 ms) Ch1 12.5 cm2) 8 × Ch0 7 8 9 8 × Ch1 7 8 9 Gain scaling (relative to 1 ×) 16 × Ch0 15 16 17 × Gain scaling (relative to 1 ×) 16 × Ch1 15 16 17 × 111 × Ch0 97 107 115 111 × Ch1 100 115 125 NOTES: 1. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Visible 640 nm LEDs and infrared 850 nm LEDs are used for final product testing for compatibility with high-volume production. 2. The 625 nm irradiance Ee is supplied by an AlInGaP light-emitting diode with the following characteristics: peak wavelength λp = 625 nm and spectral halfwidth Δλ½ = 20 nm. 3. The 850 nm irradiance Ee is supplied by a light-emitting diode with the following characteristics: peak wavelength λp = 850 nm and spectral halfwidth Δλ½ = 42 nm. 4. The integration time Tint, is dependent on internal oscillator frequency (fosc) and on the number of integration cycles (ITIME) in the Timing Register (0xFF) as described in the Register section. For nominal fosc = 750 kHz, nominal Tint = 2.7 ms × ITIME. |
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