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UT3413G-AE3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # UT3413G-AE3-R
Description  P-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT3413G-AE3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UT3413
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-159.E
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current (Note 3)
ID
-3
A
Pulsed Drain Current (Note 1, 2)
IDM
-15
A
Power Dissipation
PD
1.4
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note 3)
θJA
70
90
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0V, ID =-250µA
-20
V
Drain-Source Leakage Current
IDSS
VDS =-16V, VGS =0 V
-1
µA
Gate-Source Leakage Current
IGSS
VDS =0V, VGS = ±8 V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =-250 µA
-0.3
-0.55
-1
V
VGS =-4.5 V, ID =-3 A
81
97
mΩ
VGS =-2.5 V, ID =-2.6 A
108
130
mΩ
Drain-Source On-State Resistance(Note 2)
RDS(ON)
VGS =-1.8 V, ID =-1A
146
190
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
540
pF
Output Capacitance
COSS
72
pF
Reverse Transfer Capacitance
CRSS
VDS =-10 V, VGS =0V, f=1MHz
49
pF
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2)
tD(ON)
10
ns
Turn-ON Rise Time
tR
12
ns
Turn-OFF Delay Time
tD(OFF)
44
ns
Turn-OFF Fall Time
tF
VGS=-4.5V,VDS=-10V,
RL=3.3Ω, RGEN =3Ω
22
ns
Total Gate Charge (Note 2)
QG
6.1
nC
Gate-Source Charge
QGS
0.6
nC
Gate-Drain Charge
QGD
VDS=-10V, VGS =-4.5V, ID=-3A
1.6
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward
Voltage(Note2)
VSD
IS=-1A, VGS=0V
-0.78
-1
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
-2
A
Reverse Recovery Time
tRR
21
ns
Reverse Recovery Charge
QRR
IF=-3 A, dI/dt=100A/μs
7.5
nC
Note: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300μs, duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board



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