UTT50P06

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-596.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-60

V

Gate-Source Voltage

±20

V

-50 (Note 5)

A

-27.5

A

Drain Current

Pulsed

-80

A

Avalanche Current

-50

A

Single Pulse Avalanche Energy (Note 2) L=0.1mH

125

mJ

113 (Note 4)

Power Dissipation

2.5 (Note 3, 4)

W

Junction Temperature

-55~+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Duty cycle≤1%.

3. When Mounted on 1" square PCB (FR-4 material).

4. See SOA curve for voltage derating.

5. Package limited.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

t≤10s

18

Junction to Ambient (Note 3)

Steady State

50

Junction to Case

1.1

°C/W