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6A02-G Datasheet(PDF) 1 Page - Comchip Technology |
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6A02-G Datasheet(HTML) 1 Page - Comchip Technology |
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1 / 3 page ![]() QW-BG014 Page 1 REV:A Parameter Symbol Unit Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current O 0.375"(9.5mm) lead length @TA=75 C Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum forward voltage at 6.0A DC Maximum reverse current at rated DC blocking voltage Operating temperature range Storage temperature range TA=25°C Typical junction capacitance (Note 1) Typical thermal resistance (Note 2) 6A005-G 50 35 50 VRRM VRMS VDC I(AV) IFSM VF IR CJ RθJA TJ TSTG 6.0 400 1.0 10 100 100 10 -55 ~ +125 -55 ~ +150 V V V A A V PF O C O C μA O C/W NOTES: 1. Measured at 1.0MHz and applied reverse voltage of 4.0Volts. 2. Thermal resistance from junction to ambient . Voltage: 50 to 1000 V Current: 6.0 A RoHS Device 6A005-G Thru. 6A10-G Dimensions in inches and (millimeter) R-6 Features -Low cost construction. -Diffused Junction. -Low forward voltage drop. -High current capability. Mechanical data -Case: JEDEC R-6 molded plastic -Epoxy: UL 94V-0 rate flame retardant -Polarity: Color band denotes cathode -Mounting position: Any -Weight: 0.07ounce, 2.0 grams 6A01-G 100 70 100 6A02-G 200 140 200 6A04-G 400 280 400 6A06-G 600 420 600 6A08-G 800 560 800 6A10-G 1000 700 1000 0.360(9.10) 1.000(25.40) Min. 0.360(9.10) 0.052(1.30) 1.000(25.40) Min. 0.048(1.20) 0.340(8.60) 0.340(8.60) IR TA=100°C General Purpose Silicon Rectifiers Electrical Characteristics (at TA=25°C unless otherwise noted) Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. |
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Similar Description - 6A02-G |
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