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16T10AI-SW Datasheet(PDF) 5 Page - Nell Semiconductor Co., Ltd |
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16T10AI-SW Datasheet(HTML) 5 Page - Nell Semiconductor Co., Ltd |
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5 / 7 page ![]() 0 6 12 8 14 10 16 20 18 P(W) 0 8 2 10 4 12 6 14 I (A) T(RMS) T (°C) C 3.0 3.5 4.0 K=[Z /R ] th th D²PAK printed circuit board Fr4, copper thickness:35 µm 1E-2 I (A) T(RMS) 0 1 10 100 200 0.5 1.5 1.0 20 100 Non repetitive Tc( °c) SEMICONDUCTOR 16T Series RoHS RoHS IT(RMS)(A) 4 2 0 8 4 2 6 10 12 14 16 16 18 TO-263AB 0 25 50 75 100 125 (S=1cm²) 2.5 1.5 2.0 1.0 0.5 0.0 0 25 50 75 100 125 tp(s) Zth(j-c) Zth(j-a) 1E-1 1E+0 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 TO-220AB insulated V TM (V) Tj=25 °c Tj=Tjmax. Tj max. Vto=0.85V Rd=25mΩ Tjinitial=25°C Repetitive Tc=85°C Number of cycles I (A) TM I (A) TSM 2.0 2.5 3.0 3.5 4.0 4.5 5.0 40 60 80 120 140 160 180 1 10 100 1000 Page 5 of 7 One cycle t=20ms Fig.1 Maximum power dissipation versus on-state rms current (full cycle) Fig.2 On-state rms current versus case temperature (full cycle) Fig.3 On-state current versus ambient temperature (full cycle) Fig.4 Relative variation of thermal impedance versus pulse duration Fig.5 On-state characteristics (maximum values) Fig.6 surge peak on- state current versus number of cycles www.nellsemi.com |
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