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MSTP110 Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd

Part # MSTP110
Description  Three-phase half-controlled bridge rectifier, 110A
PDF  2 Pages
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Manufacturer  NELLSEMI [Nell Semiconductor Co., Ltd]
Direct Link  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

MSTP110 Datasheet(HTML) 2 Page - Nell Semiconductor Co., Ltd

  MSTP110 Datasheet HTML 1Page - Nell Semiconductor Co., Ltd MSTP110 Datasheet HTML 2Page - Nell Semiconductor Co., Ltd  
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SEMICONDUCTOR
MSTP110 Series RoHS
RoHS
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
IRRM,
IDRM
AT 125 ºC
mA
MSTP
10
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current (thyristors)
IT(AV)
180º conduction, half sine wave,
TC = 85 ºC
110
A
Maximum average forward current (diodes)
IF(AV)
Maximum peak, one-cycle non-repetitive
on-state or forward current
ITSM
t = 10 ms
1150
t = 8.3 ms
2
Maximum I t for fusing
T = 25 ºC, no voltage reapplied
J
6600
2
A s
t = 10 ms
t = 8.3 ms
Forward voltage
VT
I =200A
T
T = 25 ºC
J
VF
Maximum holding current
IH
T = 25 °C, anode supply = 6 V,
J
resistive load, gate open circuit
200
mA
Maximum latching current
IL
T = 25 ºC, anode supply = 6 V, resistive load
J
1230
6280
2
l t
I =200A
F
1.7
V
TRIGGERING
V
Maximum gate voltage required to trigger
VGT
Anode supply = 6 V resistive load
T = 25 ºC
J
IGT
mA
1.5
100
BLOCKING
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit
Maximum RMS insulation voltage
VINS
50 Hz ,circuit to base, all terminals shorted
2500 (1 min)
3500 (1 s)
V
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = 125 °C, linear to 0.67 VDRM
1000
THERMAL AND MECHANICAL SPECIFICATIONS
Junction operating and storage
temperature range
- 40 to 125
Maximum internal thermal resistance,
junction to case per leg
DC operation
K/W
Typical thermal resistance,
case to heatsink per module
Mounting torque ± 15 %
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
5
Nm
Approximate weight
g
oz.
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
T , T
J
stg
RthJC
0.65
0.108
265
9.3
ºC
10
mA
V/µs
400
Page 2 of 2
or
IFSM
Mounting surface flat, smooth and greased
.
RthCS
Maximum gate current required to trigger
Nell High Power Products



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