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MSTP110 Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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MSTP110 Datasheet(HTML) 2 Page - Nell Semiconductor Co., Ltd |
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2 / 2 page ![]() SEMICONDUCTOR MSTP110 Series RoHS RoHS ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V IRRM, IDRM AT 125 ºC mA MSTP 10 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current (thyristors) IT(AV) 180º conduction, half sine wave, TC = 85 ºC 110 A Maximum average forward current (diodes) IF(AV) Maximum peak, one-cycle non-repetitive on-state or forward current ITSM t = 10 ms 1150 t = 8.3 ms 2 Maximum I t for fusing T = 25 ºC, no voltage reapplied J 6600 2 A s t = 10 ms t = 8.3 ms Forward voltage VT I =200A T T = 25 ºC J VF Maximum holding current IH T = 25 °C, anode supply = 6 V, J resistive load, gate open circuit 200 mA Maximum latching current IL T = 25 ºC, anode supply = 6 V, resistive load J 1230 6280 2 l t I =200A F 1.7 V TRIGGERING V Maximum gate voltage required to trigger VGT Anode supply = 6 V resistive load T = 25 ºC J IGT mA 1.5 100 BLOCKING Maximum peak reverse and off-state leakage current at VRRM, VDRM IRRM, IDRM TJ = 125 °C, gate open circuit Maximum RMS insulation voltage VINS 50 Hz ,circuit to base, all terminals shorted 2500 (1 min) 3500 (1 s) V Maximum critical rate of rise of off-state voltage dV/dt TJ = 125 °C, linear to 0.67 VDRM 1000 THERMAL AND MECHANICAL SPECIFICATIONS Junction operating and storage temperature range - 40 to 125 Maximum internal thermal resistance, junction to case per leg DC operation K/W Typical thermal resistance, case to heatsink per module Mounting torque ± 15 % A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. 5 Nm Approximate weight g oz. PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS T , T J stg RthJC 0.65 0.108 265 9.3 ºC 10 mA V/µs 400 Page 2 of 2 or IFSM Mounting surface flat, smooth and greased . RthCS Maximum gate current required to trigger Nell High Power Products |
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