2

RF Device Data

Freescale Semiconductor, Inc.

MMZ25332BT1

Application Circuit)

Characteristic

Symbol

Min

Typ

Max

Unit

Small--Signal Gain (S21)

25

26.5

—

dB

Input Return Loss (S11)

IRL

—

--17

—

dB

Output Return Loss (S22)

ORL

—

--17

—

dB

Power Output @ 1dB Compression

P1dB

—

33

—

dBm

Third Order Output Intercept Point, Two--Tone CW

OIP3

—

48

—

dBm

Noise Figure

NF

—

5.8

—

dB

356

390

412

mA

—

5

—

V

Table 5. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

3A

Machine Model (per EIA/JESD22--A115)

B

Charge Device Model (per JESD22--C101)

IV

Table 6. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

1

260

°C

1. For reliable operation, the junction temperature should not exceed 150°C.

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

19

28

37

12

11

10

45

6

N.C.

BIAS

CIRCUIT