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TP61P Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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TP61P Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 5 page ![]() TP 61 P Semiconductor Group 204 Wesentliche Merkmale q Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1120 nm q Kathode = Chipunterseite q Mit feuchtigkeitsabweisender Schutzschicht überzogen q Weiter Temperaturbereich Anwendungen q für Me β-, Steuer- und Regelzwecke q zur Abtastung von Lichtimpulsen q quantitative Lichtmessung im sichtbaren Licht- und nahen Infrarotbereich Features q Especially suitable for applications from 400 nm to 1120 nm q Cathode = back contact q Coated with a humidity-proof protective layer q Wide temperature range Applications q For control and drive circuits q Light pulse scanning q Quantitative light measurements in the visible light and near infrared range Typ Type Bestellnummer Ordering Code TP 61 P Q62607-S61 Silizium-Fotoelement Silicon Photovoltaic Cell TP 61 P Ma βe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. 10.95 |
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