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ELECTRICAL CHARACTERISTICS

DAC5652-EP

SGLS341B – JUNE 2006 – REVISED OCTOBER 2006

over operating free-air temperature range, AVDD = DVDD = 3.3 V, I

(unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

DC Specifications

Resolution

10

Bits

INL

Integral nonlinearity

–1

±0.25

1

LSB

DNL

Differential nonlinearity

–0.5

±0.16

0.5

LSB

Analog Output

Offset error

Mid-scale value (internal reference)

±0.05

%FSR

Offset mismatch

Mid-scale value (internal reference)

±0.03

%FSR

Gain error

With internal reference

±0.75

%FSR

2

mA

20

mA

Gain mismatch

With internal reference

–2

0.2

2

%FSR

–0.8

1.25

V

Output resistance

300

k

Ω

Output capacitance

5

pF

Reference Output

Reference voltage

1.14

1.2

1.26

V

100

nA

Reference Input

Input voltage

0.1

1.25

V

Input resistance

1

M

Ω

Small signal bandwidth

300

kHz

Input capacitance

100

pF

Temperature Coefficients

Offset drift

2

ppm of FSR/

°C

With external reference

±20

Gain drift

ppm of FSR/

°C

With internal reference

±40

Reference voltage drift

±20

ppm/

°C

(1)

Measured differentially through 50

Ω to AGND.

(2)

(3)

The lower limit of the output compliance is determined by the CMOS process. Exceeding this limit may result in transistor breakdown,

resulting in reduced reliability of the DAC5652 device. The upper limit of the output compliance is determined by the load resistors and

full-scale output current. Exceeding the upper limit adversely affects distortion performance and integral nonlinearity.

(4)

Use an external buffer amplifier with high-impedance input to drive any external load.

6

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