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SISA04DN Datasheet(PDF) 5 Page - Vishay Siliconix

Part # SISA04DN
Description  N-Channel 30 V (D-S) MOSFET
PDF  13 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SISA04DN Datasheet(HTML) 5 Page - Vishay Siliconix

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Document Number: 63709
S12-0309-Rev. A, 13-Feb-12
www.vishay.com
5
Vishay Siliconix
SiSA04DN
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
26
52
78
104
130
0
25
50
75
100
125
150
T
C - Case Temperature (°C)
Limited by Package
Power, Junction-to-Case
0
13
26
39
52
65
0
25
50
75
100
125
150
T
C - Case Temperature (°C)
Power, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
0
25
50
75
100
125
150
T
A - Ambient Temperature (°C)



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