Package outline

Page 2

Formosa MS

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

SMD MOSFET

Features

In compliance with EU RoHS 2002/95/EC directives.

•

•

•

•

R

110mΩ@V =-4.5V

R

150mΩ@V =-2.5V

DS(ON)

GS

DS(ON)

GS

≦

≦

Super high density cell design for extremely low R

DS(ON)

PARAMETER

Drain-source voltage

Drain current-continue

Maximum power dissipation

Gate- source voltage-continue

Operation junction temperature

CONDITIONS

Symbol

V

DSS

P

D

T

J

R

θJA

-55 to +150

Limit

-20

100

UNIT

V

o

C

o

C/W

M

A

o

V

GS

I

D

1.3

±8.0

-2.7

V

A

W

Thermal resistance-junction to ambient*

-pulsed

I

DM

-11

Storage temperature

T

STG

-65 to +150

o

C

20V P-Channel Enhancement

Mode MOSFET

Mechanical data

•

•

•

•

•

Epoxy:UL94-V0 rated flame retardant

Case :

Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026

Mounting Position : Any

Molded plastic, SOT-23

Weight : Approximated 0.008 gram

-2 1

.

T= 25 C

A

O

T= 70 C

A

O

Document ID

Issued Date

Revised Date

Revision

Page.

T= 25 C

A

O

T= 70 C

A

O

0.8

* The device mounted on 1in FR4 board with 2 oz copper

2

FMS2301

SOT-23

Dimensions in inches and (millimeters)

0.035 (0.89)

0.051 (1.30)

0.063 (1.60)

0.047 (1.20)

0.108 (2.75)

0.083 (2.10)

0.027 (0.67)

0.013 (0.32)

(A)

(B)

(C)

DS-231129

2009/02/10

2011/07/21

C

8