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ATP107 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # ATP107
Description  General-Purpose Switching Device Applications
PDF  7 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ATP107 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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ATP107
No.A1603-2/7
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--40
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--40V, VGS=0V
--1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.5
--2.6
V
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--25A
40
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--25A, VGS=--10V
13
17
mΩ
RDS(on)2
ID=--13A, VGS=--4.5V
18.5
26
mΩ
Input Capacitance
Ciss
VDS=--20V, f=1MHz
2400
pF
Output Capacitance
Coss
330
pF
Reverse Transfer Capacitance
Crss
240
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
17
ns
Rise Time
tr
260
ns
Turn-OFF Delay Time
td(off)
190
ns
Fall Time
tf
160
ns
Total Gate Charge
Qg
VDS=--20V, VGS=--10V, ID=--50A
47
nC
Gate-to-Source Charge
Qgs
11.5
nC
Gate-to-Drain “Miller” Charge
Qgd
8nC
Diode Forward Voltage
VSD
IS=--50A, VGS=0V
--1.02
--1.5
V
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
ATP107-TL-H
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID= --25A
RL=0.8Ω
VDD= --20V
VOUT
VIN
0V
--10V
VIN
ATP107



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