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ATP201 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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ATP201 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 7 page ![]() ATP201 No. A1547-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=18A 24 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=18A, VGS=10V 13 17 mΩ RDS(on)2 ID=9A, VGS=4.5V 23 33 mΩ Input Capacitance Ciss VDS=10V, f=1MHz 985 pF Output Capacitance Coss 180 pF Reverse Transfer Capacitance Crss 100 pF Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns Rise Time tr 230 ns Turn-OFF Delay Time td(off) 51 ns Fall Time tf 39 ns Total Gate Charge Qg VDS=15V, VGS=10V, ID=35A 17 nC Gate-to-Source Charge Qgs 4.7 nC Gate-to-Drain “Miller” Charge Qgd 2.8 nC Diode Forward Voltage VSD IS=35A, VGS=0V 0.97 1.2 V Switching Time Test Circuit Ordering Information Device Package Shipping memo ATP201-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% P.G 50Ω G S D ID=18A RL=0.83Ω VDD=15V VOUT ATP201 VIN 10V 0V VIN |
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