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ATP203 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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ATP203 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 7 page ![]() ATP203 No. A1318-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=38A 13 22 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=38A, VGS=10V 6.3 8.2 mΩ RDS(on)2 ID=19A, VGS=4.5V 9.5 13.5 mΩ Input Capacitance Ciss VDS=10V, f=1MHz 2750 pF Output Capacitance Coss 450 pF Reverse Transfer Capacitance Crss 265 pF Turn-ON Delay Time td(on) See specified Test Circuit. 24 ns Rise Time tr 420 ns Turn-OFF Delay Time td(off) 130 ns Fall Time tf 75 ns Total Gate Charge Qg VDS=15V, VGS=10V, ID=75A 44 nC Gate-to-Source Charge Qgs 14 nC Gate-to-Drain “Miller” Charge Qgd 5.6 nC Diode Forward Voltage VSD IS=75A, VGS=0V 1.02 1.2 V Switching Time Test Circuit Ordering Information Device Package Shipping memo ATP203-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% P.G 50Ω G S D ID=38A RL=0.39Ω VDD=15V VOUT ATP203 VIN 10V 0V VIN |
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