ATP214_12 datasheet(2/7 Pages) SANYO

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ATP214

No. A1712-2/7

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

Zero-Gate Voltage Drain Current

IDSS

VDS=60V, VGS=0V

μA

Gate-to-Source Leakage Current

IGSS

VGS=±16V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

1.2

2.6

Forward Transfer Admittance

| yfs |

VDS=10V, ID=38A

100

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=38A, VGS=10V

6.2

8.1

mΩ

RDS(on)2

ID=19A, VGS=4.5V

8.2

11.5

mΩ

RDS(on)3

ID=10A, VGS=4V

9.2

mΩ

Input Capacitance

Ciss

VDS=20V, f=1MHz

4850

Output Capacitance

Coss

370

Reverse Transfer Capacitance

Crss

280

Turn-ON Delay Time

td(on)

See speciﬁed Test Circuit.

Rise Time

240

Turn-OFF Delay Time

td(off)

360

Fall Time

250

Total Gate Charge

VDS=30V, VGS=10V, ID=75A

Gate-to-Source Charge

Qgs

18.5

Gate-to-Drain “Miller” Charge

Qgd

Diode Forward Voltage

VSD

IS=75A, VGS=0V

0.93

1.2

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

ATP214-TL-H

ATPAK

3,000pcs./reel

Pb Free and Halogen Free

PW=10μs

D.C.≤1%

P.G

50Ω

ID=38A

RL=0.79Ω

VDD=30V

VOUT

ATP214

VIN

10V

VIN

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