ATP216_12 datasheet(2/7 Pages) SANYO

2 / 7 page

ATP216

No.8985-2/7

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

Zero-Gate Voltage Drain Current

IDSS

VDS=50V, VGS=0V

μA

Gate-to-Source Leakage Current

IGSS

VGS=±8V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

0.4

1.4

Forward Transfer Admittance

| yfs |

VDS=10V, ID=18A

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=18A, VGS=4.5V

mΩ

RDS(on)2

ID=9A, VGS=2.5V

mΩ

RDS(on)3

ID=5A, VGS=1.8V

mΩ

Input Capacitance

Ciss

VDS=20V, f=1MHz

2700

Output Capacitance

Coss

150

Reverse Transfer Capacitance

Crss

110

Turn-ON Delay Time

td(on)

See speciﬁed Test Circuit.

Rise Time

Turn-OFF Delay Time

td(off)

220

Fall Time

105

Total Gate Charge

VDS=30V, VGS=4.5V, ID=35A

Gate-to-Source Charge

Qgs

5.9

Gate-to-Drain “Miller” Charge

Qgd

7.9

Diode Forward Voltage

VSD

IS=35A, VGS=0V

0.96

1.2

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

ATP216-TL-H

ATPAK

3,000pcs./reel

Pb Free and Halogen Free

PW=10μs

D.C.≤1%

P.G

50Ω

ID=18A

RL=1.67Ω

VDD=30V

VOUT

ATP216

VIN

4.5V

VIN

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