MGSF3454XT1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 µA)

V(BR)DSS

30

—

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70°C)

IDSS

—

—

—

—

1.0

25

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

—

±100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

VGS(th)

1.0

—

—

Vdc

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 1.75 A)

(VGS = 4.5 Vdc, ID = 1.5 A)

rDS(on)

—

—

0.05

0.07

0.065

0.095

Ohms

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 5.0 V)

Ciss

—

345

—

pF

Output Capacitance

(VDS = 5.0 V)

Coss

—

215

—

Transfer Capacitance

(VDG = 5.0 V)

Crss

—

140

—

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(V

10 Vd

I

1 0 A

td(on)

—

10

—

ns

Rise Time

(VDD = 10 Vdc, ID = 1.0 A,

tr

—

15

—

Turn–Off Delay Time

( DD

, D

,

VGEN = 10 V, RL = 10 Ω)

td(off)

—

20

—

Fall Time

tf

—

10

—

Gate Charge

QT

—

—

15

nC

SOURCE–DRAIN DIODE CHARACTERISTICS

Continuous Current

IS

—

—

1.0

A

Pulsed Current

ISM

—

—

5.0

A

Forward Voltage(2)

VSD

—

—

1.2

V

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. Output Characteristics

Figure 2. On–Resistance versus Drain Current

7.0

10

1.0

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

7.0

6.0

4.0

5.0

3.0

ID, DRAIN CURRENT (AMPS)

7.0

0

0.10

0.06

0.04

0.02

2.0

1.0

4.0

2.0

3.0

5.0

6.0

8.0

9.0

5.0

6.0

1.0

2.0

3.0

4.0

0.08

0.12

0

0

VGS = 10 V

TJ = 150°C

VGS = 4.5 V

4.0 V

3.5 V

3.0 V

2.5 V

2.25 V

25

°C

–55

°C