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HSB320 Datasheet(PDF) 1 Page - Hi-Sincerity Mocroelectronics |
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HSB320 Datasheet(HTML) 1 Page - Hi-Sincerity Mocroelectronics |
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1 / 3 page ![]() HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HL200901 Issued Date : 2009.02.13 Revised Date :2009.08.0 Page No. : 1/3 HSB320 thru HSB3100 HSMC Product Specification HSB320 thru HSB3100 DO-15 Schottky Barrier Rectifiers (Reverse Voltage 20 to 100V, Forward Current 3A) Features • Low Forward Voltage Drop • High Current Capability • High Reliability • High Surge Current Capability Mechanical Data • Cases: DO-15 molded plastic body • Epoxy: UL 94V-0 rate flame retardant • Lead: Axial leads, solderable per MIL-STD-202, Method 208 guaranteed • Polarity: Color band denotes cathode end • High temperature soldering guaranteed: 250°C/10seconds/.375”(9.5mm) lead lengths at 5lbs.(2.3kg) tension • Weight: 0.4gram Maximum Ratings & Electrical Characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load. Derate current by 20%. Ratings Symbol HSB 320 HSB 330 HSB 340 HSB 350 HSB 360 HSB 380 HSB 3100 Unit Repetitive Peak Reverse Voltage VRRM 20 30 40 50 60 80 100 V Surge Peak Reverse Voltage VRSM 14 21 28 35 42 57 71 V DC Blocking Voltage VDC 20 30 40 50 60 80 100 V Average Forward Rectified Current (TA=75 oC) IFAV 3 A Peak Forward Surge Current, 50Hz Half Sine-wave (TA=25 oC) IFSM 80 A Repetitive Peak Forward C (f>15Hz) IFRM 12 A Instantaneous Forward Voltage VF 0.48 0.52 0.7 0.8 V Leakage Current (TJ=25 oC, V R=VRRM) 0.1 mA Leakage Current (TJ=100 oC, V R=VRRM) IR 20 mA Typical Junction Capacitance CJ 170 pF Rating for Fusing, t<10ms (TA=25 oC) i 2t 12.5 A 2s Thermal Resistance Junction to Ambient Air RθJA 50 °C/W Thermal Resistance Junction to Lead RθJL 15 °C/W Operating Junction Temperature Range TJ -65 to +125 °C Storage Temperature Range TSTG -65 to +150 °C ESD Protection Voltage VESD <8 KV |
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