DF2S24UCT

2011-11-10

1

TOSHIBA Diodes for Protecting against ESD

DF2S24UCT

Product for Use Only as Protection against Electrostatic Discharge (ESD)

*This product is for protection against electrostatic discharge (ESD) only

and is not intended for any other usage, including without limitation,

the constant voltage diode application.

Characteristic

Symbol

Rating

Unit

Power dissipation

P

150*

mW

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,

pad dimension of 4 mm × 4 mm.

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse stand-off voltage

(between Cathode and Anode)

―

―

―

19

V

Reverse breakdown voltage

(between Cathode and Anode)

22.0

―

―

V

Reverse current

(between Cathode and Anode)

―

―

0.5

μA

Total capacitance

(between Cathode and Anode)

―

1.6

―

pF

Reverse stand-off voltage

(between Anode and Cathode)

―

―

―

5

V

Reverse breakdown voltage

(between Anode and Cathode)

5.3

―

―

V

Reverse current

(between Anode and Cathode)

―

―

0.1

μA

Marking

Equivalent Circuit (Top View)

JEDEC

―

JEITA

―

TOSHIBA

1-1P1A

Weight: 0.7 mg (typ.)

Unit: mm

RU

CST2

0.5±0.03

0.05±0.03

0.6±0.05

0.38+0.02

-0.03