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2N2905AHR Datasheet(PDF) 3 Page - STMicroelectronics |
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2N2905AHR Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() 2N2905AHR Electrical characteristics Doc ID 15295 Rev 3 3/8 2 Electrical characteristics Tcase = 25 °C unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector-base cut-off current (IE = 0) VCB = -50 V VCB = -50 V, TC = 150 °C -10 -10 nA µA V(BR)CBO Collector-base breakdown voltage (IE = 0) IC = -10 µA -60 V V(BR)CEO (1) 1. Pulsed duration = 300 µs, duty cycle ≤ 1.5% Collector-emitter breakdown voltage (IB = 0) IC = -10 mA -60 V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = -10 µA -5 V VCE(sat) (1) Collector-emitter saturation voltage IC = -150 mA, IB = -15 mA -0.4 V VBE(sat) (1) Base-emitter saturation voltage IC = -150 mA, IB = -15 mA -1.3 V hFE (1) DC current gain IC = -0.1 mA, VCE = -10 V IC = -1 mA, VCE = -10 V IC = -150 mA, VCE = -10 V IC = -500 mA, VCE = -10 V 75 100 100 50 300 hfe Small signal current gain VCE = -20 V, IC = -50 mA f = 100 MHz 2 CCBO Output capacitance (IE = 0) VCB = -10 V 100 kHz ≤ f ≤1 MHz 8pF ton Turn-on time VCC = -30 V, IC = -150 mA IB1 = -15 mA 45 ns toff Turn-off time VCC = -30 V, IC = -150 mA IB1 = -IB2 = -15 mA 300 ns |
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