2N5551HR datasheet(3/10 Pages) STMICROELECTRONICS

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2N5551HR

Electrical characteristics

Doc ID 16935 Rev 3

3/10

Electrical characteristics

Tcase = 25 °C unless otherwise specified.

Table 5.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector-base cut-off

current (IE = 0)

VCB = 120 V

TC = 150 °C

µA

IEBO

Emitter-base cut-off

current (IC = 0)

VEB = 4 V

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

IC = 100 µA

180

V(BR)CEO

(1)

Pulsed duration = 300 µs, duty cycle

≤ 1.5%

Collector-emitter

breakdown voltage

(IB = 0)

IC = 1 mA

160

V(BR)EBO

Emitter-base

breakdown voltage

(IC = 0)

IE = 10 µA

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 10 mA

IB = 1 mA

IC = 50 mA

IB = 5 mA

0.15

0.2

VBE(sat)

(1)

Base-emitter

saturation voltage

IC = 10 mA

IB = 1 mA

IC = 50 mA

IB = 5 mA

hFE

(1)

DC current gain

IC = 1 mA

VCE = 5 V

IC = 10 mA

VCE = 5 V

IC = 50 mA

VCE = 5 V

IC = 10 mA

VCE = 5 V

Tamb = - 55 °C

250

hfe

Small signal current

gain

VCE = 10 V

IC = 1 mA

f = 1 kHz

200

hfe

Small signal current

gain

VCE = 10 V

IC = 10 mA

f > 100 MHz

Cobo

Output capacitance

(IE = 0)

VCB = 10 V

f = 1 MHz

Cebo

Emitter-base

capacitance (IC = 0)

VEB = 5 V

f = 1 MHz

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