L6392_10 datasheet(11/20 Pages) STMICROELECTRONICS

11 / 20 page

L6392

Electrical characteristics

Doc ID 14494 Rev 5

11/20

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

Driving buffers section

Iso

10, 13

High/low side source

short circuit current

Vi = Vih (tp < 10 ms)

200

290

Isi

High/low side sink short

circuit current

Vi = Vil (tp < 10 ms)

250

430

Logic inputs

Vil

1, 2, 3

Low logic level voltage

0.8

Vih

High logic level voltage

2.25

Vil_S

1, 3

Single input voltage

LIN and HIN connected together

and floating

0.8

IHINh

HIN logic “1” input bias

current

HIN = 15 V

110

175

260

μA

IHINl

HIN logic “0” input bias

current

HIN = 0 V

μA

ILINI

LIN logic “0” input bias

current

LIN = 0 V

μA

ILINh

LIN logic “1” input bias

current

LIN = 15 V

μA

ISDh

SD logic “1” input bias

current

SD = 15 V

100

μA

ISDl

SD logic “0” input bias

current

SD = 0 V

μA

VBO = Vboot - Vout

RDSon is tested in the following way:

RDSon = [(VCC - VCBOOT1) - (VCC - VCBOOT2)] / [I1(VCC,VCBOOT1) - I2(VCC,VCBOOT2)] where I1 is pin 14 current when

VCBOOT = VCBOOT1, I2 when VCBOOT = VCBOOT2

Table 8.

DC operation electrical characteristics (VCC = 15 V; TJ = +25 °C) (continued)

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