STPS1150_11 datasheet(3/11 Pages) STMICROELECTRONICS

3 / 11 page

STPS1150

Characteristics

Doc ID 9472 Rev 5

3/11

Figure 1.

Average forward power

dissipation versus average

forward current

Figure 2.

Average forward current versus

ambient temperature (

δ = 0.5)

(W)

F(AV)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0.0

0.2

0.4

0.6

0.8

1.0

1.2

(A)

F(AV)

δ=tp/T

δ = 1

δ = 0.5

δ = 0.05

δ = 0.1

δ = 0.2

0.0

0.2

0.4

0.6

0.8

1.0

1.2

100

125

150

175

STmite and STmite flat

Rth(j-a) = Rth(j-c)

SMA

Rth(j-a) = Rth(j-l)

DO-41

Rth(j-a) = Rth(j-l)

Rth(j-a) = 250 °C/W

Rth(j-a) = 120 °C/W

δ = t / T

(A)

F(AV)

(°C)

amb

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(tp)

(1 µs)

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(Tj)

(25 °C)

ARM

Figure 5.

Non repetitive surge peak

forward current versus overload

duration - maximum values

Figure 6.

Non repetitive surge peak

forward current versus overload

duration - maximum values

1.E-03

1.E-02

1.E-01

1.E+00

STmite

I (A)

t(s)

δ = 0.5

T = 25 °C

T = 75 °C

T = 125 °C

1.E-03

1.E-02

1.E-01

1.E+00

STmite flat

I (A)

t(s)

δ = 0.5

T = 25 °C

T = 75 °C

T = 125 °C

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