STPS2045C_10 datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

STPS2045C

4/10

Doc ID 3506 Rev 6

Figure 7.

Relative variation of thermal

impedance junction to ambient vs

pulse duration

Figure 8.

Relative variation of thermal

impedance junction to ambient vs

pulse duration (TO-220FPAB)

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

t (s)

Z/R

th(j-c)

δ=tp/T

(TO-220AB, D PAK, I PAK)

1E-3

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

t (s)

Z/R

th(j-c)

δ=tp/T

Figure 9.

Reverse leakage current vs reverse

voltage applied

(typical values, per diode)

Figure 10.

Junction capacitance vs reverse

voltage applied

(typical values, per diode)

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

5E+4

I (µA)

V (V)

T =150°C

T =125°C

T =100°C

T =75°C

T =50°C

T =25°C

100

200

500

1000

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

Figure 11.

Forward voltage drop vs forward

current

(maximum values, per diode)

Figure 12.

Thermal resistance junction to

ambient vs copper surface under

tab

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.1

1.0

10.0

100.0

(A)

T =125°C

(typical values)

T =125°C

T =25°C

(V)

S(cm²)

(°C/W)

th(j-a)

(Epoxy printed circuit board, copper thickness: 35 µm)

(D PAK)

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