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STPS2045CH Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS2045CH Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() Characteristics STPS2045CH 2/7 Doc ID 023045 Rev 1 1 Characteristics When the diodes 1 and 2 are used simultaneously: ΔT j(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) To evaluate the conduction losses use the following equation: P = 0.42 x IF(AV) + 0.015 IF 2 (RMS) Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IF(RMS) Forward rms voltage 20 A IF(AV) Average forward current δ = 0.5 Tc = 155 °C Per diode 10 A Tc = 150 °C Per package 20 IFSM Surge non repetitive forward current tp = 10 ms sine-wave 150 A PARM (1) Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 280 W VARM (2) Maximum repetitive peak avalanche voltage tp < 10 µs, Tj < 125 °C, IAR < 4.7 A 60 V VASM (2) Maximum single-pulse peak avalanche voltage tp < 10 µs, Tj < 125 °C, IAR < 4.7 A 60 V Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature(3) + 175 °C 1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. See Figure 8 3. condition to avoid thermal runaway for a diode on its own heatsink dPtot dTj < 1 Rth(j-a) Table 3. Thermal resistance parameters Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode Total 2.50 1.6 °C/W Rth (c) Coupling 0.7 °C/W Table 4. Static electrical characteristics (per diode) Symbol Parameter Tests conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM 100 µA Tj = 125 °C 7 15 mA VF (2) Forward voltage drop Tj = 125 °C IF = 10 A 0.5 0.57 V Tj = 25 °C IF = 20 A 0.84 Tj = 125 °C 0.65 0.72 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% |
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