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STTH602C-Y Datasheet(PDF) 2 Page - STMicroelectronics

Part # STTH602C-Y
Description  Automotive ultrafast recovery diode
PDF  7 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH602C-Y Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
STTH602C-Y
2/7
Doc ID 023250 Rev 1
1
Characteristics
When the two diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P (diode 1) X R
th(j-c) (Per diode) + P (diode 2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 0.85 x IF(AV) + 0.033 IF
2
(RMS)
Table 2.
Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
200
V
IF(RMS)
RMS forward current
11
A
IF(AV)
Average forward current,
 = 0.5
Per diode Tc = 160° C
3
A
Per device Tc = 155° C
6
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
60
A
Tstg
Storage temperature range
-65 to + 175
° C
Tj
Operating junction temperature
-40 to + 175
° C
Table 3.
Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
Per diode
5
° C/W
Per device
3.0
Rth(c)
Coupling
Per diode
1
Per diode
3
Table 4.
Static electrical characteristics
Symbol
Parameter
Test conditions
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25° C
VR = VRRM
3
µA
Tj = 125° C
3
30
VF
(2)
Forward voltage drop
Tj = 25° C
IF = 3 A
0.98
1.1
V
Tj = 150° C
0.8
0.95
Tj = 25° C
IF = 6 A
1.1
1.25
Tj = 150° C
0.9
1.05
1.
Pulse test: tp = 5 ms,  < 2%
2.
Pulse test: tp = 380 µs,  < 2%



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