STTH802-Y datasheet(3/7 Pages) STMICROELECTRONICS

3 / 7 page

STTH802-Y

Characteristics

Doc ID 018563 Rev 2

3/7

Figure 1.

Peak current versus duty cycle

Figure 2.

Forward voltage drop versus

forward current (typical values)

Figure 3.

Forward voltage drop versus

forward current (maximum values)

Figure 4.

Relative variation of thermal

impedance, junction to case,

versus pulse duration

Figure 5.

Junction capacitanceversus

reverse applied voltage

(typical values)

Figure 6.

Reverse recovery charges versus

dIF/dt (typical values)

100

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

M(A)

d=tp/T

δ=tp/T

P = 2 W

P = 1 W

P = 5 W

100

120

140

160

180

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

FM(A)

j=25°C

j=150°C

VFM(V)

100

120

140

160

180

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

FM(A)

j=25°C

j=150°C

VFM(V)

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

th(j-c)/Rth(j-c)

Single pulse

tp(s)

100

1000

C(pF)

F=1MHz

osc=30mVRMS

j=25°C

VR(V)

100

120

140

160

100

1000

RR(nC)

F=8A

R=160V

j=125°C

j=25°C

dIF/dt(A/µs)

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