| Electronic Components Datasheet Search |
|
RT8167B Datasheet(PDF) 33 Page - Richtek Technology Corporation |
|
|
|||||||||||||||||||||||||||||
RT8167B Datasheet(HTML) 33 Page - Richtek Technology Corporation |
|
33 / 38 page ![]() RT8167B 33 DS8167B-00 October 2011 www.richtek.com Figure 11. On-Time Setting with RC Filter (13) ≥ ×× × = − ONx REFx -12 TONSETx REFx IN REFx t (V 1.2V) 23.33 10 R V VV (14) − − −− =× − ⎡⎤ +× + − ⎣⎦ ⎡⎤ +× − ⎣⎦ S(MAX) ON HS Delay REFx(MAX) LOAD(MAX) ON _ LS FET DROOP IN(MAX) LOAD(MAX) ON _ LS FET ON _ HS FET 1 f(kHz) tt VI R DCR R VI R R When VREFx is larger than 1.2V, the equivalent switching frequency may be over the maximum design range, making it unacceptable. Therefore, the VR implements a pseudo- constant-frequency technology to avoid this disadvantage of CCRCOT topology. When VREFx is larger than 1.2V, the on-time equation will be modified to : On-time translates roughly to switching frequencies. The on-times guaranteed in the Electrical Characteristics are influenced by switching delays in external high side MOSFET. Also, the dead-time effect increases the effective on-time, reducing the switching frequency. It occurs only in CCM during dynamic output voltage transitions when the inductor current reverses at light or negative load currents. With reversed inductor current, PHASEx goes high earlier than normal, extending the on-time by a period equal to the high side MOSFET rising dead time. For better efficiency of the given load range, the maximum switching frequency is suggested to be : where fS(MAX) is the maximum switching frequency, tHS- Delay is the turn on delay of high side MOSFET, VREFx(MAX) is the maximum application DAC voltage of application, VIN(MAX) is the maximum application input voltage, ILOAD(MAX) is the maximum load of application, RON_LS-FET is the low side MOSFET RDS(ON), RON_HS-FET is the high side MOSFET RDS(ON), DCRL is the inductor DCR, and RDROOP is the load line setting. GFX/CORE VR CCRCOT PWM Generator TONSETx RTONSETx R1 C1 VIN VREFx On-Time Differential Remote Sense Setting The CORE/GFX VR includes differential, remote-sense inputs to eliminate the effects of voltage drops along the PC board traces, CPU internal power routes and socket contacts. The CPU contains on-die sense pins CORE/ GFX VCC_SENSE and VSS_SENSE. Connect RGNDx to CORE/ GFX VSS_SENSE. Connect FBx to CORE/GFX VCC_SENSE with a resistor to build the negative input path of the error amplifier. The precision voltage reference VREFx is referred to RGND for accurate remote sensing. Current Sense Setting The current sense topology of the CORE/GFX VR is continuous inductor current sensing. Therefore, the controller can be less noise sensitive. Low offset amplifiers are used for loop control and over current detection. The internal current sense amplifier gain (AI) is fixed to be 10. The ISENxP and ISENxN denote the positive and negative input of the current sense amplifier. Users can either use a current sense resistor or the inductor's DCR for current sensing. Using inductor's DCR allows higher efficiency as shown in Figure 12. To let then the transient performance will be optimum. For example, choose L = 0.36 μH with 1mΩ DCR and CX = 100nF, to yields for RX : X X L RC DCR =× (15) X 0.36 H R3.6k 1m 100nF μ == Ω Ω× (16) L DCR RX CX VOUT (VCORE/VGFX) CByp + - ISENxP ISENxN PHASEx AI VCSx Figure 12. Lossless Inductor Sensing |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |