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2N2102 Datasheet(PDF) 1 Page - Comset Semiconductor |
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2N2102 Datasheet(HTML) 1 Page - Comset Semiconductor |
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1 / 3 page  NPN 2N2102 COMSET SEMICONDUCTORS 1/3 MEDIUM POWER AMPLIFIER & SWITCH The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. They are intended for a wide variety of small-signall and medium power applications in military and industrial equipments. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage (IB = 0) 65 V VCBO Collector-Base Voltage (IE = 0) 120 V VCER Collector-Emitter Voltage (RBE = 10 Ω) 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current 1 A PD Total Power Dissipation Tamb= 25°C 1 W Tcase= 25°C 5 TJ Junction Temperature -65 to 200 °C TStg Storage Temperature range THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-c Thermal Resistance, Junction-case 35 °C/ W Rthj-a thermal resistance from junction to ambient in free air 175 |
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Similar Description - 2N2102 |
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